photodiode-chip preliminary 11.04.2007 rev. 04/07 wavelength range infrared, selective typ. dimensions (m) description 300 (20) m anode gold alloy, 1.5 m cathode applications gold alloy, 0.5 m miscellaneous parameters t amb = 25c, unless otherwise specified symbol value unit a 0.17 mm2 t amb -40 to +125 c t stg -40 to +125 c optical and electrical characteristics t amb = 25c, unless otherwise specified parameter test conditions symbol min typ max unit dark current v r = 1 v i d 1.0 2.5 na peak sensitivity v r = 0 v p 890 nm spectral range at 50 % v r = 0 v 0.5 820 935 nm spectral bandwidth at 50% v r = 0 v ? 0.5 115 nm responsivity at p 1 v r = 0 v s 0.15 0.25 a/w switching time v r = 1 v t r, t f 15/30 ns 1 measured on bare chip on to-18 header labeling type typ. i d [pa] typ. s [a/w] ep -880-0.5 packing: chips on adhesive film with wire-bond side on top *note: all measurements carried out with epigap equipment lot n quantity type integrated filter epc-880-0.5 electrodes p (anode) up technology algaas/gaas infrared-selective photo- diode with narrow response range (810 - 950 nm) typ. thickness optical communications, safety equipment, light barriers parameter test onditions storage temperature range active area operating temperature range pd-02 300 360 460 epigap optoelektronik gmbh, d-12555 berlin, k?penicker str.325 b, haus 201 tel.: +49-30-6576 2543, fax : +49-30-6576 2545 1 of 2
photodiode-chip preliminary 11.04.2007 rev. 04/07 epc-880-0.5 700 750 800 850 900 950 1000 0,0 0,1 0,2 0,3 0,4 0,5 0,6 wavelength [nm] typical spectral response [a/w] epigap optoelektronik gmbh, d-12555 berlin, k?penicker str.325 b, haus 201 tel.: +49-30-6576 2543, fax : +49-30-6576 2545 2 of 2
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